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XTX XT61M1G8C2TM-B8BEA
| Manufacturer | XTXAsian Brands |
| MPN | XT61M1G8C2TM-B8BEA |
| LCSC Part # | C29781628 |
| Packaging | BGA-162(10.5x8) |
| Customer # | |
| Key Attributes | 1Gb NAND Flash + 1Gb Low Power DDR2 SDRAM |
| Datasheet |  XTX XT61M1G8C2TM-B8BEA |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Office Supplies/Storage Products/Specialized Memory Products | |
| Manufacturer | XTX | |
| Packaging | BGA-162(10.5x8) | |
| Voltage - Supply | 1.7V~1.95V | |
| Operating Temperature | -40℃~+85℃ | |
| RAM architecture | DDR SDRAM | |
| Flash architecture | NAND FLASH | |
| Type of memory | 1 FLASH +1 RAM | |
| Memory Size of Flash | 1Gbit | |
| Memory Size of RAM | 1Gbit | |
| Clock Frequency(fc) | 10MHz |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 242 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
XTX nMCP is a Multi-Chip Packaged memory which combines NAND flash memory and LPDDR2 (Low Power Double Data Rate) SDRAM. The NAND flash memory provides the most cost-effective solution for the non-volatile solid state mass storage market, while the LPDDR2 is an excellent solution for large volatile but fast storage applications such as random/temporary data access. XTX nMCP is suitable for use in data memory of portable electronic devices to reduce its square size and power consumption at the same time. The NAND flash memory and LPDDR2 SDRAM in it could be operated individually.
Features
AI Translation
- <NAND flash> Single Level per Cell (SLC) Technology
- ECC requirement: 8bit/544Bytes
- Power Supply Voltage Voltage range: 1.7V~1.95V
- Organization Page size: x8 (2048+128) bytes; 128-bytes spare area
- Block size: x8 (128k+8k) bytes 1004 block (min)~1024 block (max)
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
- Access time Cell array to register: 25μs (max) Serial Read Cycle: 25 ns (min) (CL=50pF)
- Program/Erase time Auto Page Program: 300 μs /page (typ.) Auto Block Erase: 3.5 ms/block( typ.)
- Reliability 10 Year Data Retention (typ.)
- <LPDDR2> Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V VDDCA/VDDQ = 1.14 - 1.30V – VDD1 = 1.70 - 1.95V
- Clock frequency range 533 - 10 MHz (data rate range: 1066– 20 Mb/s/pin)
- Four-bit prefetch DDR architecture
- Eight internal banks for concurrent operation
- Multiplexed, double data rate, command/address inputs; commands entered on every CK edge
- Bidirectional/differential data strobe per byte of data (DQS/DQS#)
- Programmable READ and WRITE latencies (RL/WL)
- Programmable burst lengths: 4, 8, or 16
- Per-bank refresh for concurrent operation
- On-chip temperature sensor to control selfrefresh rate (SR not supported >105℃)
- Partial-array self-refresh (PASR)
- Deep power-down mode (DPD)
- Selectable output drive strength (DS)
- Clock stop capability
- RoHS-compliant, “green” packaging
- Configuration – 4 Meg x 32 x 8 banks
- Row Addressing 8K (A[12:0])
- Column Addressing – 512 (A[8:0])
- Number of die 1
- Die per rank 1
- Ranks per channel 1
- Operating temperature range From -25℃ to +85℃
In-Stock: 482
482 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 11.5832$ 9.2666 | $ 9.27 |
| 10+ | $ 11.4253$ 9.1403 | $ 91.40 |
| 30+ | $ 11.1519$ 8.9216 | $ 267.65 |
| 100+ | $ 10.9143$ 8.7315 | $ 873.15 |
Standard Packaging242/Full Tray | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Office Supplies/Storage Products/Specialized Memory Products | |
| Manufacturer | XTX | |
| Packaging | BGA-162(10.5x8) | |
| Voltage - Supply | 1.7V~1.95V | |
| Operating Temperature | -40℃~+85℃ | |
| RAM architecture | DDR SDRAM | |
| Flash architecture | NAND FLASH | |
| Type of memory | 1 FLASH +1 RAM | |
| Memory Size of Flash | 1Gbit | |
| Memory Size of RAM | 1Gbit | |
| Clock Frequency(fc) | 10MHz |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 242 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
XTX nMCP is a Multi-Chip Packaged memory which combines NAND flash memory and LPDDR2 (Low Power Double Data Rate) SDRAM. The NAND flash memory provides the most cost-effective solution for the non-volatile solid state mass storage market, while the LPDDR2 is an excellent solution for large volatile but fast storage applications such as random/temporary data access. XTX nMCP is suitable for use in data memory of portable electronic devices to reduce its square size and power consumption at the same time. The NAND flash memory and LPDDR2 SDRAM in it could be operated individually.
Features
AI Translation
- <NAND flash> Single Level per Cell (SLC) Technology
- ECC requirement: 8bit/544Bytes
- Power Supply Voltage Voltage range: 1.7V~1.95V
- Organization Page size: x8 (2048+128) bytes; 128-bytes spare area
- Block size: x8 (128k+8k) bytes 1004 block (min)~1024 block (max)
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
- Access time Cell array to register: 25μs (max) Serial Read Cycle: 25 ns (min) (CL=50pF)
- Program/Erase time Auto Page Program: 300 μs /page (typ.) Auto Block Erase: 3.5 ms/block( typ.)
- Reliability 10 Year Data Retention (typ.)
- <LPDDR2> Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V VDDCA/VDDQ = 1.14 - 1.30V – VDD1 = 1.70 - 1.95V
- Clock frequency range 533 - 10 MHz (data rate range: 1066– 20 Mb/s/pin)
- Four-bit prefetch DDR architecture
- Eight internal banks for concurrent operation
- Multiplexed, double data rate, command/address inputs; commands entered on every CK edge
- Bidirectional/differential data strobe per byte of data (DQS/DQS#)
- Programmable READ and WRITE latencies (RL/WL)
- Programmable burst lengths: 4, 8, or 16
- Per-bank refresh for concurrent operation
- On-chip temperature sensor to control selfrefresh rate (SR not supported >105℃)
- Partial-array self-refresh (PASR)
- Deep power-down mode (DPD)
- Selectable output drive strength (DS)
- Clock stop capability
- RoHS-compliant, “green” packaging
- Configuration – 4 Meg x 32 x 8 banks
- Row Addressing 8K (A[12:0])
- Column Addressing – 512 (A[8:0])
- Number of die 1
- Die per rank 1
- Ranks per channel 1
- Operating temperature range From -25℃ to +85℃
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |