ISSI IS43TR16128BL-125KBLI

Products Specifications

Type	Description	All
Category	Integrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturer	ISSI
Packaging	BGA-96(13x9)
Refresh Current	-
Voltage - Supply	1.283V~1.45V
Memory Size	2Gbit
Operating temperature	-40℃~+95℃
Clock Frequency	800MHz
Features	Auto self-refresh;Asynchronous reset function;Auto precharge function;Write leveling function;Dynamic on-chip termination;ZQ calibration function;Data mask function
Memory Format	DDR3L SDRAM
Current - Supply	-

AI Translation

Standard Voltage: VDD and VD D O = 1.5V ± 0.075V
Low Voltage (L): VDD and VD D O = 1.35V + 0.1V - 0.067V
Backward compatible to 1.5V
High speed data transfer rates with system frequency up to 1066 MHz
8 internal banks for concurrent operation
8n - Bit pre - fetch architecture
Programmable CAS Latency
Programmable Additive Latency: 0, CL - 1, CL - 2
Programmable CAS WRITE latency (CWL) based on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT)
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8 only)
OCD (Off - Chip Driver Impedance Adjustment)
Dynamic ODT (On - Die Termination)
Driver strength: RZQ/7, RZQ/6 (RZQ = 240 Ω)
Write Leveling Up to 200 MHz in DLL off mode
Operating temperature: Commercial ΔTc = 0℃ to +95℃; Industrial TC = - 40℃ to +95℃; Automotive, A1 TC = - 40℃ to +95℃; Automotive, A2 (TC = - 40℃ to +105℃)

In-Stock: 17

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Qty	Unit Price	Total Amount
1+	$ 6.8725	$ 6.87
10+	$ 6.0214	$ 60.21
30+	$ 5.5029	$ 165.09
100+	$ 4.5426	$ 454.26
Standard Packaging1500/Full Reel

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Type	Description	All
Category	Integrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturer	ISSI
Packaging	BGA-96(13x9)
Refresh Current	-
Voltage - Supply	1.283V~1.45V
Memory Size	2Gbit
Operating temperature	-40℃~+95℃
Clock Frequency	800MHz
Features	Auto self-refresh;Asynchronous reset function;Auto precharge function;Write leveling function;Dynamic on-chip termination;ZQ calibration function;Data mask function
Memory Format	DDR3L SDRAM
Current - Supply	-

AI Translation

Standard Voltage: VDD and VD D O = 1.5V ± 0.075V
Low Voltage (L): VDD and VD D O = 1.35V + 0.1V - 0.067V
Backward compatible to 1.5V
High speed data transfer rates with system frequency up to 1066 MHz
8 internal banks for concurrent operation
8n - Bit pre - fetch architecture
Programmable CAS Latency
Programmable Additive Latency: 0, CL - 1, CL - 2
Programmable CAS WRITE latency (CWL) based on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT)
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8 only)
OCD (Off - Chip Driver Impedance Adjustment)
Dynamic ODT (On - Die Termination)
Driver strength: RZQ/7, RZQ/6 (RZQ = 240 Ω)
Write Leveling Up to 200 MHz in DLL off mode
Operating temperature: Commercial ΔTc = 0℃ to +95℃; Industrial TC = - 40℃ to +95℃; Automotive, A1 TC = - 40℃ to +95℃; Automotive, A2 (TC = - 40℃ to +105℃)