ST STP200N3LL
| Manufacturer | |
| MPN | STP200N3LL |
| LCSC Part # | C2971658 |
| Packaging | TO-220-3 |
| Customer # | |
| Key Attributes | 30V 200A 2.5V 176.5W 2.4mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 200A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 176.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 510pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.2nF | |
| Gate Charge(Qg) | 53nC@0V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This device is an N-channel power MOSFET featuring ultra-low on-resistance R<sub>DS(on)</sub> across all package options.
Features
AI Translation
- Ultra-low on-resistance
- Ultra-low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Applications
AI Translation
- Switching applications
In-Stock: 40
40 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.262 | $ 1.26 |
| 10+ | $ 1.2328 | $ 12.33 |
| 30+ | $ 1.2134 | $ 36.40 |
| 100+ | $ 1.1355 | $ 113.55 |
Standard Packaging1000/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 200A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 176.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 510pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.2nF | |
| Gate Charge(Qg) | 53nC@0V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This device is an N-channel power MOSFET featuring ultra-low on-resistance R<sub>DS(on)</sub> across all package options.
Features
AI Translation
- Ultra-low on-resistance
- Ultra-low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Applications
AI Translation
- Switching applications
C2971658 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

