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ST PD55003L-E
| Manufacturer | |
| MPN | PD55003L-E |
| LCSC Part # | C2971478 |
| Packaging | VDFN-8-Power |
| Customer # | |
| Key Attributes | N-channel Enhancement-mode Lateral MOSFET, Current:2.5A, Voltage:40V |
| Datasheet |  ST PD55003L-E |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | VDFN-8-Power | |
| Drain to Source Voltage | 40V | |
| Configuration | Common source | |
| Current - Continuous Drain(Id) | 2.5A | |
| Type | N-Channel | |
| RDS(on) | 360mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 14W | |
| Operating Temperature | -65℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 34pF | |
| Vgs | ±15V | |
| Output Capacitance(Coss) | 23pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | VDFN-8-Power | |
| Drain to Source Voltage | 40V | |
| Configuration | Common source | |
| Current - Continuous Drain(Id) | 2.5A | |
| Type | N-Channel | |
| RDS(on) | 360mΩ@10V |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 14W | |
| Operating Temperature | -65℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 34pF | |
| Vgs | ±15V | |
| Output Capacitance(Coss) | 23pF |
Introduction
PD55003L-E is a common-source N-channel enhancement-mode lateral RF power FET designed for high-gain, wideband commercial and industrial applications. Operating in common-source configuration at 12 V, it supports frequencies up to 1 GHz. The PD55003L-E features an innovative leadless SMT PowerFLAT plastic package incorporating STH1LV's latest LD-MOS technology, delivering excellent gain, linearity, and reliability. The outstanding linear performance of the PD55003L-E makes it an ideal solution for automotive mobile radio applications.
Features
- Excellent thermal stability
- Common-source configuration
- Output power POUT = 3 W with 17 dB gain at 500 MHz/12.5 V
- Novel leadless plastic package
- ESD protection
- Available in tape-and-reel packaging of 3000 units
- Compliant with European directive 2002/95/EC
Applications
- Switching applications
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 17.1398 | $ 17.14 |
| 10+ | $ 16.5826 | $ 165.83 |
| 30+ | $ 15.6176 | $ 468.53 |
| 100+ | $ 14.7776 | $ 1477.76 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | VDFN-8-Power | |
| Drain to Source Voltage | 40V | |
| Configuration | Common source | |
| Current - Continuous Drain(Id) | 2.5A | |
| Type | N-Channel | |
| RDS(on) | 360mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 14W | |
| Operating Temperature | -65℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 34pF | |
| Vgs | ±15V | |
| Output Capacitance(Coss) | 23pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | VDFN-8-Power | |
| Drain to Source Voltage | 40V | |
| Configuration | Common source | |
| Current - Continuous Drain(Id) | 2.5A | |
| Type | N-Channel | |
| RDS(on) | 360mΩ@10V |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 14W | |
| Operating Temperature | -65℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 34pF | |
| Vgs | ±15V | |
| Output Capacitance(Coss) | 23pF |
Introduction
PD55003L-E is a common-source N-channel enhancement-mode lateral RF power FET designed for high-gain, wideband commercial and industrial applications. Operating in common-source configuration at 12 V, it supports frequencies up to 1 GHz. The PD55003L-E features an innovative leadless SMT PowerFLAT plastic package incorporating STH1LV's latest LD-MOS technology, delivering excellent gain, linearity, and reliability. The outstanding linear performance of the PD55003L-E makes it an ideal solution for automotive mobile radio applications.
Features
- Excellent thermal stability
- Common-source configuration
- Output power POUT = 3 W with 17 dB gain at 500 MHz/12.5 V
- Novel leadless plastic package
- ESD protection
- Available in tape-and-reel packaging of 3000 units
- Compliant with European directive 2002/95/EC
Applications
- Switching applications
C2971478 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |