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ST STD3NK60Z-1 product image
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ST STD3NK60Z-1RoHS

Manufacturer
ST
MPN
STD3NK60Z-1
LCSC Part #
C2971196
Packaging
IPAK
Customer #
Key Attributes
MOSFET N-CH 600V 2.4A IPAK
Datasheetpdf iconST STD3NK60Z-1
In-Stock: 32
32 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.1241$ 2.12
10+$ 1.7817$ 17.82
30+$ 1.5675$ 47.03
75+$ 1.3485$ 101.14
525+$ 1.2495$ 655.99
975+$ 1.2057$ 1175.56
Standard Packaging75/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingIPAK
Drain to Source Voltage600V
Output Capacitance(Coss)43pF
Current - Continuous Drain(Id)2.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)3.6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)311pF
Gate Charge(Qg)11.8nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging75
Sales UnitPiece

Introduction

AI Translation

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

Features

AI Translation
  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitance
  • Zener-protected

Applications

AI Translation
  • Switching applications