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ST STGB10H60DF
| Manufacturer | |
| MPN | STGB10H60DF |
| LCSC Part # | C2971195 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | IGBT 600V 20A D2PAK |
| Datasheet |  ST STGB10H60DF |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Td(off) | 103ns | |
| Pd - Power Dissipation | 115W | |
| Td(on) | 19.5ns | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Collector(Ic) | 20A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Input Capacitance(Cies) | 1.3nF@25V | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@250uA | |
| Vce Saturation(VCE(sat)) | 1.95V@10A,15V | |
| Reverse Recovery Time(trr) | 107ns | |
| Switching Energy(Eoff) | 140uJ | |
| Turn-On Energy (Eon) | 83uJ |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Features
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Short-circuit rated
- Ultrafast soft recovery antiparallel diode
Applications
- Motor control
- UPS
- PFC
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.321 | $ 2.32 |
| 10+ | $ 2.2614 | $ 22.61 |
| 30+ | $ 2.2228 | $ 66.68 |
| 100+ | $ 2.1826 | $ 218.26 |
Standard Packaging1000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Td(off) | 103ns | |
| Pd - Power Dissipation | 115W | |
| Td(on) | 19.5ns | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Collector(Ic) | 20A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Input Capacitance(Cies) | 1.3nF@25V | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@250uA | |
| Vce Saturation(VCE(sat)) | 1.95V@10A,15V | |
| Reverse Recovery Time(trr) | 107ns | |
| Switching Energy(Eoff) | 140uJ | |
| Turn-On Energy (Eon) | 83uJ |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Features
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Short-circuit rated
- Ultrafast soft recovery antiparallel diode
Applications
- Motor control
- UPS
- PFC
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |