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ST STGB10H60DF

Manufacturer
ST
MPN
STGB10H60DF
LCSC Part #
C2971195
Packaging
D2PAK
Customer #
Key Attributes
IGBT 600V 20A D2PAK
DatasheetST STGB10H60DF
RoHS Compliance3 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerST
PackagingD2PAK
Td(off)103ns
Pd - Power Dissipation115W
Td(on)19.5ns
Current - Collector(Ic)20A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)30pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@250uA
Operating Temperature-55℃~+175℃
Vce Saturation(VCE(sat))1.95V@10A,15V
Collector Cut-Off Current (Ices)-
Reverse Recovery Time(trr)107ns
Switching Energy(Eoff)140uJ
Turn-On Energy (Eon)83uJ
Input Capacitance(Cies)1.3nF@25V
Output Capacitance(Coes)60pF
Gate Charge(Qg)57nC@15V
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Introduction

AI Translation

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features

AI Translation
  • High speed switching
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance
  • Short-circuit rated
  • Ultrafast soft recovery antiparallel diode

Applications

AI Translation
  • Motor control
  • UPS
  • PFC