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ST STD3N62K3RoHS

Manufacturer
ST
MPN
STD3N62K3
LCSC Part #
C2971181
Packaging
DPAK
Customer #
Key Attributes
MOSFET N-CH 620V 2.7A DPAK
Datasheetpdf iconST STD3N62K3
In-Stock: 40
40 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.0197$ 1.02
10+$ 0.9979$ 9.98
30+$ 0.9839$ 29.52
100+$ 0.9699$ 96.99
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingDPAK
Drain to Source Voltage620V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)2.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)2.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)385pF
Gate Charge(Qg)13nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.

Features

AI Translation
  • 100% avalanche tested
  • Extremely high dv/dt capability
  • Very low intrinsic capacitance
  • Improved diode reverse recovery characteristics
  • Zener-protected

Applications

AI Translation
  • Switching applications