ST STD60NF55LAT4
| Manufacturer | |
| MPN | STD60NF55LAT4 |
| LCSC Part # | C2971177 |
| Packaging | TO-252(DPAK) |
| Customer # | |
| Key Attributes | 55V 60A 2V 110W 15mΩ@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252(DPAK) | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 60A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.95nF | |
| Gate Charge(Qg) | 56nC@5V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This power MOSFET is developed using a unique STripFET process, specifically designed to minimize input capacitance and gate charge. This makes the device suitable for use as a primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computing applications, as well as applications with low gate charge drive requirements.
Features
AI Translation
- Low-threshold drive
Applications
AI Translation
- Switching applications
- Automotive
In-Stock: 50
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.4503 | $ 1.45 |
| 10+ | $ 1.4168 | $ 14.17 |
| 30+ | $ 1.3945 | $ 41.84 |
| 100+ | $ 1.3721 | $ 137.21 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252(DPAK) | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 60A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.95nF | |
| Gate Charge(Qg) | 56nC@5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This power MOSFET is developed using a unique STripFET process, specifically designed to minimize input capacitance and gate charge. This makes the device suitable for use as a primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computing applications, as well as applications with low gate charge drive requirements.
Features
AI Translation
- Low-threshold drive
Applications
AI Translation
- Switching applications
- Automotive
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



