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ST STP20NM60FDRoHS

Manufacturer
ST
MPN
STP20NM60FD
LCSC Part #
C2971021
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 600V 20A TO-220
Datasheetpdf iconST STP20NM60FD
In-Stock: 51
51 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 4.297$ 4.30
10+$ 3.6741$ 36.74
30+$ 3.3026$ 99.08
100+$ 2.9279$ 292.79
500+$ 2.7543$ 1377.15
1,000+$ 2.6765$ 2676.50
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Drain to Source Voltage600V
Output Capacitance(Coss)500pF
Current - Continuous Drain(Id)20A
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)290mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
Gate Charge(Qg)52nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

Features

AI Translation
  • High dv/dt and avalanche capabilities
  • 100% Avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Tight process control and high manufacturing yields

Applications

AI Translation
  • Switching application