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ST STL210N4F7AG product image
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ST STL210N4F7AGRoHS

Manufacturer
ST
MPN
STL210N4F7AG
LCSC Part #
C2971013
Packaging
PowerFLAT-8(5x6)
Customer #
Key Attributes
MOSFET N-CH 40V 120A PowerFLAT-8(5x6)
Datasheetpdf iconST STL210N4F7AG
In-Stock: 1,270
1,270 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.5214$ 1.52
10+$ 1.4027$ 14.03
30+$ 1.3267$ 39.80
100+$ 1.2507$ 125.07
500+$ 1.2159$ 607.95
1,000+$ 1.2016$ 1201.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingPowerFLAT-8(5x6)
Drain to Source Voltage40V
Output Capacitance(Coss)1.24nF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)56pF
RDS(on)1.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.6nF
Gate Charge(Qg)43nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

AI Translation
  • Designed for automotive applications and AEC-Q101 qualified
  • Among the lowest RDS(on) on the market
  • Excellent figure of merit (FoM)
  • Low C_rss/C_iss ratio for EMI immunity
  • High avalanche ruggedness
  • Wettable flank package

Applications

AI Translation
  • Switching applications