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ST PD55003-ERoHS

Manufacturer
MPN
PD55003-E
LCSC Part #
C2970926
Packaging
PowerSO-10RF
Customer #
Key Attributes
MOSFET N-CH 40V 2.5A PowerSO-10RF
Datasheetpdf iconST PD55003-E

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs
ManufacturerST
PackagingPowerSO-10RF
Drain to Source Voltage40V
ConfigurationCommon source
Current - Continuous Drain(Id)2.5A
TypeN-Channel
RDS(on)750mΩ@10V
Gate Threshold Voltage (Vgs(th))5V
Operating Temperature-
Pd - Power Dissipation31.7W
Reverse Transfer Capacitance (Crss@Vds)2.4pF
Number1 N-channel
Input Capacitance(Ciss)36pF
Output Capacitance(Coss)24pF

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

The PD55003-E is a common-source N-channel enhancement-mode lateral field-effect RF power transistor. It is designed for high-gain, broadband commercial and industrial applications. In common-source configuration, it operates at 12V up to 1 GHz. Leveraging ST's latest LDMOS technology and housed in the PowerSO-10RF — the first true surface-mount plastic RF power package — the PD55003 delivers excellent gain, linearity, and reliability. The PD55003's outstanding linearity makes it an ideal solution for automotive mobile radio applications. The PowerSO-10RF plastic package is designed for high reliability and is ST's first JEDEC-qualified high-power SMT package. Optimized for RF requirements, it offers excellent RF performance and ease of assembly.

Features

AI Translation
  • Excellent thermal stability
  • Common-source configuration
  • Output power P<sub>OUT</sub> = 3 W with 17 dB gain at 500 MHz/12.5 V

Applications

AI Translation
  • Switching applications
In-Stock: 335
335 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 11.4945$ 11.49
10+$ 11.3467$ 113.47
50+$ 11.0913$ 554.57
100+$ 10.8696$ 1086.96
Standard Packaging50/Full Tube
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