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ST STD5NM50AGRoHS

Manufacturer
ST
MPN
STD5NM50AG
LCSC Part #
C2970538
Packaging
TO-252(DPAK)
Customer #
Key Attributes
MOSFET N-CH 500V 7.5A TO-252(DPAK)
Datasheetpdf iconST STD5NM50AG
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.7043$ 1.70
10+$ 1.4297$ 14.30
30+$ 1.2331$ 36.99
100+$ 1.0626$ 106.26
500+$ 0.9878$ 493.90
1,000+$ 0.9537$ 953.70
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-252(DPAK)
Drain to Source Voltage500V
Output Capacitance(Coss)88pF
Current - Continuous Drain(Id)7.5A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)800mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)415pF
Gate Charge(Qg)13nC@10V
TypeN-Channel
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Introduction

AI Translation

This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low onresistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar products on the market.

Features

AI Translation
  • AEC-Q101 qualified
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications

AI Translation
  • Switching applications