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ST PD57060S-ERoHS

Manufacturer
MPN
PD57060S-E
LCSC Part #
C2970400
Packaging
PowerSO-10
Customer #
Key Attributes
65V 7A 4V 79W 1 N-channel PowerSO-10 RF FETs, MOSFETs RoHS
Datasheetpdf iconST PD57060S-E

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs
ManufacturerST
PackagingPowerSO-10
Drain to Source Voltage65V
Configuration-
Current - Continuous Drain(Id)7A
TypeN-Channel
RDS(on)-
Gate Threshold Voltage (Vgs(th))4V
Operating Temperature-
Pd - Power Dissipation79W
Reverse Transfer Capacitance (Crss@Vds)3pF
Number1 N-channel
Input Capacitance(Ciss)83pF
Gate Charge(Qg)-
Output Capacitance(Coss)58pF

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

Features

AI Translation
  • Excellent thermal stability
  • Common source configuration
  • P0UT = 60 W with 14.3dB gain @ 945 MHz/28 V
  • New RF plastic package

Applications

AI Translation
  • Commercial and industrial applications
  • Base station applications
In-Stock: 5
5 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 57.005$ 57.01
30+$ 54.0832$ 1622.50
Standard Packaging50/Full Tube
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