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ST STD4N62K3RoHS

Manufacturer
ST
MPN
STD4N62K3
LCSC Part #
C2970197
Packaging
DPAK
Customer #
Key Attributes
MOSFET N-CH 620V 3.8A DPAK
Datasheetpdf iconST STD4N62K3
In-Stock: 70
70 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.4322$ 0.43
10+$ 0.4227$ 4.23
30+$ 0.4164$ 12.49
100+$ 0.4101$ 41.01
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingDPAK
Drain to Source Voltage620V
Output Capacitance(Coss)42pF
Current - Continuous Drain(Id)3.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)550pF
Gate Charge(Qg)22nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.

Features

AI Translation
  • 100% avalanche tested
  • Extremely high dv/dt capability
  • Ultra-low intrinsic capacitance
  • Improved diode reverse recovery characteristics
  • Zener protection

Applications

AI Translation
  • Switching applications