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ST STP12NK30Z product image
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ST STP12NK30ZRoHS

Manufacturer
ST
MPN
STP12NK30Z
LCSC Part #
C2970130
Packaging
TO-220-3
Customer #
Key Attributes
N-Channel, Current:9A, Voltage:300V
Datasheetpdf iconST STP12NK30Z
In-Stock: 156
156 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.2588$ 1.26
10+$ 1.0317$ 10.32
30+$ 0.9084$ 27.25
100+$ 0.7673$ 76.73
500+$ 0.704$ 352.00
1,000+$ 0.6765$ 676.50
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220-3
Drain to Source Voltage300V
Output Capacitance(Coss)125pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)400mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)670pF
Gate Charge(Qg)35nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

The SuperMESH™ series is derived from extreme optimization of ST's well-established strip-based PowerMESH™ layout. In addition to significantly reducing on-resistance, special emphasis has been placed on ensuring excellent dv/dt performance in the most demanding applications. This series completes ST's full lineup of high-voltage MOSFETs, which includes the groundbreaking MDmesh™ products.

Features

AI Translation
  • Typical R<sub>DS(on)</sub> = 0.36 Ω
  • Extremely high dv/dt performance
  • Enhanced ESD performance
  • 100% avalanche rated
  • Minimal gate charge
  • Ultra-low intrinsic capacitance
  • Excellent manufacturing repeatability

Applications

AI Translation
  • Lighting
  • Ideal for offline power supplies, adapters, and power factor correction (PFC)
  • High-current, high-speed switching