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HUAYI HY3215WRoHS

Manufacturer
HUAYIAsian Brands
MPN
HY3215W
LCSC Part #
C2965569
Packaging
TO-247A-3L
Customer #
Key Attributes
MOSFET N-CH 150V 130A TO-247A-3L
Datasheetpdf iconHUAYI HY3215W
In-Stock: 132
132 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.768$ 1.77
10+$ 1.5112$ 15.11
30+$ 1.248$ 37.44
90+$ 1.0839$ 97.55
660+$ 1.0091$ 666.01
990+$ 0.9782$ 968.42
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUAYI
PackagingTO-247A-3L
Drain to Source Voltage150V
Output Capacitance(Coss)480pF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation349W
RDS(on)14mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)194pF
Number1 N-channel
Input Capacitance(Ciss)5.925nF
Gate Charge(Qg)135nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

This device is a P-channel power MOSFET developed using STripFET™ F6 technology with a novel trench gate structure. The resulting power MOSFET exhibits extremely low on-state resistance RDS(on) across all packages.

Features

AI Translation
  • 150V/130A
  • R₀s₍ₒₙ₎ = 11.5mΩ(typ.) @ V₀.₅ = 10V
  • 100% Avalanche Tested
  • Reliable and Rugged
  • Halogen Free and Green Devices Available (RoHS Compliant)

Applications

AI Translation
  • Brushless Motor Drive
  • Electric Power Steering