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ST STL120N8F7RoHS

Manufacturer
ST
MPN
STL120N8F7
LCSC Part #
C2965369
Packaging
VDFN-8-Power
Customer #
Key Attributes
MOSFET N-CH 80V 120A VDFN-8-Power
Datasheetpdf iconST STL120N8F7
In-Stock: 2,784
2,784 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.16$ 1.16
10+$ 0.9553$ 9.55
30+$ 0.8432$ 25.30
100+$ 0.7165$ 71.65
500+$ 0.6596$ 329.80
1,000+$ 0.6336$ 633.60
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingVDFN-8-Power
Drain to Source Voltage80V
Output Capacitance(Coss)800pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)64pF
RDS(on)4.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.6nF
Gate Charge(Qg)60nC@10V
TypeN-Channel
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Introduction

AI Translation

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

AI Translation
  • Among the lowest RDS(on) on the market
  • Excellent FoM (figure of merit)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness

Applications

AI Translation
  • Switching applications