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ST STF26N60DM6 product image
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ST STF26N60DM6RoHS

Manufacturer
ST
MPN
STF26N60DM6
LCSC Part #
C2965362
Packaging
TO-220FP
Customer #
Key Attributes
N-channel, Current: 18A, Voltage: 600V
Datasheetpdf iconST STF26N60DM6
In-Stock: 46
46 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 5.3925$ 5.39
10+$ 5.2696$ 52.70
30+$ 5.1872$ 155.62
100+$ 5.1047$ 510.47
Standard Packaging350/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220FP
Drain to Source Voltage600V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.75V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)195mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)940pF
Gate Charge(Qg)24nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging350
Sales UnitPiece

Introduction

AI Translation

This high-voltage N-channel power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared to the previous generation MDmesh fast-recovery diodes, the DM6 combines ultra-low recovery charge (Qrr) and recovery time (trr) with a significant improvement in on-resistance per unit area (RDS(on)), and features one of the most effective switching characteristics on the market for demanding high-efficiency bridge topologies and zero-voltage switching (ZVS) phase-shift converters.

Features

AI Translation
  • Fast recovery body diode
  • Lower RDS(on) per unit area compared to previous generation
  • Low gate charge, input capacitance, and resistance
  • 100% avalanche tested
  • Extremely high dv/dt robustness
  • Zener diode protection

Applications

AI Translation
  • Switching applications