ST STF6N90K5
| Manufacturer | |
| MPN | STF6N90K5 |
| LCSC Part # | C2965319 |
| Packaging | TO-220FP |
| Customer # | |
| Key Attributes | N-channel, Current:6A, Voltage:900V |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FP | |
| Drain to Source Voltage | 900V | |
| Output Capacitance(Coss) | 31pF | |
| Current - Continuous Drain(Id) | 6A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.2pF | |
| RDS(on) | 1.1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 342pF | |
| Gate Charge(Qg) | 11nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This ultra-high voltage N-channel power MOSFET is designed with MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a significantly reduced on-resistance combined with ultra-low gate charge, making it well-suited for applications demanding high power density and efficiency.
Features
AI Translation
- Industry-lowest on-resistance area product
- Industry-best figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener protection
Applications
AI Translation
- Switching applications
In-Stock: 63
63 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.6065 | $ 2.61 |
| 10+ | $ 2.5467 | $ 25.47 |
| 50+ | $ 2.5063 | $ 125.32 |
| 100+ | $ 2.4675 | $ 246.75 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FP | |
| Drain to Source Voltage | 900V | |
| Output Capacitance(Coss) | 31pF | |
| Current - Continuous Drain(Id) | 6A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.2pF | |
| RDS(on) | 1.1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 342pF | |
| Gate Charge(Qg) | 11nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This ultra-high voltage N-channel power MOSFET is designed with MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a significantly reduced on-resistance combined with ultra-low gate charge, making it well-suited for applications demanding high power density and efficiency.
Features
AI Translation
- Industry-lowest on-resistance area product
- Industry-best figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener protection
Applications
AI Translation
- Switching applications
C2965319 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

