DIODES DMP21D6UFD-7
| Manufacturer | |
| MPN | DMP21D6UFD-7 |
| LCSC Part # | C2960365 |
| Packaging | X1-DFN1212-3 |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 600mA X1-DFN1212-3 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | X1-DFN1212-3 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 7.2pF | |
| Current - Continuous Drain(Id) | 600mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 800mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.9pF | |
| RDS(on) | 3Ω@1.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 46.1pF | |
| Gate Charge(Qg) | 800pC@8V | |
| Type | P-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Low On-Resistance
- Very Low Gate Threshold Voltage VGS(TH), -1.0V Max
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
AI Translation
- DC-DC Converters
- Power Management Functions
In-Stock: 790
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0435 | $ 0.44 |
| 100+ | $ 0.0426 | $ 4.26 |
| 300+ | $ 0.0419 | $ 12.57 |
| 1,000+ | $ 0.0413 | $ 41.30 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | X1-DFN1212-3 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 7.2pF | |
| Current - Continuous Drain(Id) | 600mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 800mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.9pF | |
| RDS(on) | 3Ω@1.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 46.1pF | |
| Gate Charge(Qg) | 800pC@8V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Low On-Resistance
- Very Low Gate Threshold Voltage VGS(TH), -1.0V Max
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
AI Translation
- DC-DC Converters
- Power Management Functions
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



