DIODES DMC1028UVT-7
| Manufacturer | |
| MPN | DMC1028UVT-7 |
| LCSC Part # | C2960343 |
| Packaging | TSOT-26 |
| Customer # | |
| Key Attributes | MOSFET N-CH+P-CH ARR 20V 6.1A TSOT-26 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | TSOT-26 | |
| Current - Continuous Drain(Id) | 6.1A | |
| Pd - Power Dissipation | 1.2W | |
| RDS(on) | 210mΩ@1.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 177pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 787pF | |
| Gate Charge(Qg) | 18.5nC@8V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 203pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | TSOT-26 | |
| Current - Continuous Drain(Id) | 6.1A | |
| Pd - Power Dissipation | 1.2W | |
| RDS(on) | 210mΩ@1.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V |
| Type | Description | |
|---|---|---|
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 177pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 787pF | |
| Gate Charge(Qg) | 18.5nC@8V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 203pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
AI Translation
- Backlighting
- DC-DC Converters
- Power Management Functions
In-Stock: 1,845
1,845 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3206 | $ 1.60 |
| 50+ | $ 0.2629 | $ 13.15 |
| 150+ | $ 0.2382 | $ 35.73 |
| 500+ | $ 0.2073 | $ 103.65 |
| 3,000+ | $ 0.1935 | $ 580.50 |
| 6,000+ | $ 0.1853 | $ 1111.80 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | TSOT-26 | |
| Current - Continuous Drain(Id) | 6.1A | |
| Pd - Power Dissipation | 1.2W | |
| RDS(on) | 210mΩ@1.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 177pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 787pF | |
| Gate Charge(Qg) | 18.5nC@8V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 203pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | TSOT-26 | |
| Current - Continuous Drain(Id) | 6.1A | |
| Pd - Power Dissipation | 1.2W | |
| RDS(on) | 210mΩ@1.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V |
| Type | Description | |
|---|---|---|
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 177pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 787pF | |
| Gate Charge(Qg) | 18.5nC@8V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 203pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
AI Translation
- Backlighting
- DC-DC Converters
- Power Management Functions
C2960343 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



