Infineon/CYPRESS CY7C266-25PC

CY7C266 is a high-performance 8192 x 8-bit CMOS PROM. When deselected, the CY7C266 automatically enters a low-power standby mode. It is available in a 600-mil wide package. Reprogrammable packages are equipped with erase windows; when exposed to ultraviolet light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology with a byte-wide intelligent programming algorithm. The CY7C266 is a direct replacement for EPROM devices. EPROM cells require only 12.5V superVoltage, and low current requirements allow gang programming. EPROM cells allow 100% testing of each memory location, as each location is written, erased, and cycled prior to packaging. Each PROM also undergoes AC performance testing to ensure that after customer programming, the product will meet DC and AC specification limits. Read operations are accomplished by applying active-low signals to OE and CE. The contents of the memory location addressed by the address lines (A0–A12) will be available on the output lines (O0–O7).

• CMOS technology, optimized speed and power consumption
• Erase window for reprogramming
• High speed: 20ns (commercial)
• Low power: 660mW (commercial)
• Ultra-low standby power: <85mW when deselected
• EPROM technology, 100% programmable
• Supply voltage: 5V ±10%, commercial grade compatible
• I/O TTL-compatible
• Direct replacement for 27C64 EPROM