Infineon/CYPRESS CY7C293A-25PC

CY7C291A, CY7C292A, and CY7C293A are high-performance 2K×8-bit CMOS PROMs. They are functionally identical but differ in package type: the 7C291A and 7C293A use 300-mil packages, while the 7C292A uses 600-mil wide plastic and ceramic DIP packages. The CY7C293A features automatic power-down, reducing power consumption by more than 70% when deselected. The 300-mil ceramic package is available with an erase window; when exposed to UV light, the PROM can be erased and reprogrammed. The memory cells employ proven EPROM floating-gate technology with a byte-wide intelligent programming algorithm. These devices are direct replacements for bipolar devices, offering the advantages of low power consumption, reprogrammability, superior performance, and high programming yield. EPROM cell programming requires only 12.5V overvoltage, and the low current requirement allows gang programming. Each memory cell is 100% tested prior to packaging, including write, erase, and repeated operations. Each PROM also undergoes AC performance testing to ensure that the product meets DC and AC specification limits after customer programming. Read operations are performed by asserting an active-low signal on CS1 (active low), active-high signals on CS2 and CS3. The contents of the memory cell addressed by the address lines (A0–A10) will be available on the output lines (O0–O7).

• Window for reprogramming
• CMOS for speed/power
• Low power dissipation - 660 mW (commercial)
• Low standby power - 220 mW (commercial)
• EPROM technology 100% programmable
• Available in slim 300-mil or standard 600-mil package
• 5V ±10% Vcc, commercial
• TTL-compatible I/O
• Direct replacement for bipolar PROM
• ESD protection >2001V