Nexperia BUK9K35-60E,115
| Manufacturer | |
| MPN | BUK9K35-60E,115 |
| LCSC Part # | C295460 |
| Packaging | LFPAK56D |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 60V 22A LFPAK56D |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Nexperia | |
| Packaging | LFPAK56D | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 22A | |
| Pd - Power Dissipation | 38W | |
| RDS(on) | 35mΩ@5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.081nF | |
| Gate Charge(Qg) | 7.8nC@5V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 118pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Nexperia | |
| Packaging | LFPAK56D | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 22A | |
| Pd - Power Dissipation | 38W | |
| RDS(on) | 35mΩ@5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.081nF | |
| Gate Charge(Qg) | 7.8nC@5V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 118pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features
AI Translation
- Dual MOSFET
- Q101 Compliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
Applications
AI Translation
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.0481 | $ 1.05 |
| 10+ | $ 0.9594 | $ 9.59 |
| 30+ | $ 0.9207 | $ 27.62 |
| 100+ | $ 0.874 | $ 87.40 |
| 500+ | $ 0.8514 | $ 425.70 |
| 1,500+ | $ 0.8385 | $ 1257.75 |
Standard Packaging1500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Nexperia | |
| Packaging | LFPAK56D | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 22A | |
| Pd - Power Dissipation | 38W | |
| RDS(on) | 35mΩ@5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.081nF | |
| Gate Charge(Qg) | 7.8nC@5V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 118pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Nexperia | |
| Packaging | LFPAK56D | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 22A | |
| Pd - Power Dissipation | 38W | |
| RDS(on) | 35mΩ@5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.081nF | |
| Gate Charge(Qg) | 7.8nC@5V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 118pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features
AI Translation
- Dual MOSFET
- Q101 Compliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
Applications
AI Translation
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
C295460 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



