Infineon/CYPRESS S29GL01GT10FHI010

The S29GL01GT/512T are MIRRORBIT™ flash products fabricated on 45-nm process technology. These devices offer a fast page access time as fast as 15 ns, with a corresponding random access time as fast as 100 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance, and lower power consumption.

• 45-nm MIRRORBIT™ technology
• Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
• Versatile I/O feature - Wide I/O voltage range (V10): 1.65 V to VCC
• x8/x16 data bus
• Asynchronous 32-byte page read
• 512-byte programming buffer - Programming in page multiples, up to a maximum of 512 bytes
• Single word and multiple program on same word options
• Automatic error checking and correction (ECC) — internal hardware ECC with single bit error correction
• Sector erase - Uniform 128-KB sectors
• Suspend and Resume commands for program and erase operations
• Status Register, Data Polling, and Ready/Busy pin methods to determine device status
• Advanced sector protection (ASP) - Volatile and non-volatile protection methods for each sector
• Separate 2048-byte one-time program (OTP) array - Four lockable regions (SSR0–SSR3) - SSR0 is factory locked - SSR3 is password read protect
• Common flash interface (CFI) parameter table
• Temperature range / grade - Industrial (-40℃ to +85℃) - Industrial Plus (-40℃ to +105℃) - Extended (-40℃ to +125℃) - Automotive, AEC-Q100 grade 3 (-40℃ to +85℃) - Automotive, AEC-Q100 grade 2 (-40℃ to +105℃)
• 100,000 program/erase cycles
• 20-year data retention