Nanya Tech NT5CC256M16DP-DI
| Manufacturer | Nanya TechAsian Brands |
| MPN | NT5CC256M16DP-DI |
| LCSC Part # | C2943100 |
| Packaging | BGA-96(13x9) |
| Customer # | |
| Key Attributes | 1.35V 4Gbit 800MHz DDR3 SDRAM BGA-96(13x9) Memory (ICs) RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory (ICs) | |
| Manufacturer | Nanya Tech | |
| Packaging | BGA-96(13x9) | |
| Refresh Current | - | |
| Voltage - Supply | 1.35V | |
| Memory Size | 4Gbit | |
| Operating temperature | 0℃~+95℃ | |
| Clock Frequency | 800MHz | |
| Features | Auto self-refresh;Auto precharge function;Asynchronous reset function;Data mask function;Write leveling function;Dynamic on-chip termination;ZQ calibration function | |
| Memory Format | DDR3 SDRAM | |
| Current - Supply | - |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This 4Gb Double Data Rate 3 (DDR3(L)) DRAM is a high-speed CMOS synchronous DRAM containing 4,294,967,296 bits of storage. It is internally configured as an eight-bank architecture. The 4Gb die is organized as 64M bits × 8 I/O × 8 banks and 32M bits × 16 I/O × 8 banks. These synchronous devices achieve high-speed DDR transfer rates of up to 2133 Mb/s/pin, suitable for general-purpose applications. The die is designed to comply with all key DDR3(L) DRAM features, with all control and address inputs synchronized to a pair of externally supplied differential clocks. Inputs are latched at the crossing point of the differential clock (rising edge of CK and falling edge of CK̄). All I/Os are source-synchronous, referenced to either a single-ended data strobe or a differential data strobe pair. These devices operate from a 1.5V ± 0.075V or 1.35V -0.067V/+0.1V single power supply and are available in BGA packages.
Features
- Compliant with JEDEC DDR3 standard
- 8n prefetch architecture
- Differential clock (CK/CK) and data strobe (DQS/DQS)
- Double data rate on data I/O, data strobe, and data mask
- Auto self-refresh via on-die temperature sensor (DRAM)
- Auto refresh and self-refresh modes
- Partial array self-refresh
- Power-down mode
- Configurable drive strength for improved system compatibility
- Configurable on-die termination (ODT)
- ZQ calibration via external ZQ pin (240Ω ± 1%) for drive strength/ODT impedance accuracy
- Write leveling via mode register settings
- Read leveling via multipurpose register
- Interface and power supply: DDR3 SSTL_15, VDD/VDDQ = 1.5V (±0.075V); DDR3L SSTL_135, VDD/VDDQ = 1.35V (-0.067V / +0.1V)
- Speed grades: 2133 Mbps / 14-14-14, 1866 Mbps / 13-13-13, 1600 Mbps / 11-11-11
- Temperature range: Commercial = 0°C ~ 95°C, Quasi-Industrial (-T) = -40°C ~ 95°C, Industrial (-I) = -40°C ~ 95°C, Automotive Grade 2 (-H) = -40°C ~ 105°C, Automotive Grade 3 (-A) = -40°C ~ 95°C
- Programmable features: CAS latency, CAS write latency, additive latency, write recovery time, burst type, burst length, self-refresh temperature range, output driver impedance, ODT nominal value, ODT write value, precharge power-down mode
- Package/density: Lead-free RoHS compliant and halogen-free
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory (ICs) | |
| Manufacturer | Nanya Tech | |
| Packaging | BGA-96(13x9) | |
| Refresh Current | - | |
| Voltage - Supply | 1.35V | |
| Memory Size | 4Gbit | |
| Operating temperature | 0℃~+95℃ | |
| Clock Frequency | 800MHz | |
| Features | Auto self-refresh;Auto precharge function;Asynchronous reset function;Data mask function;Write leveling function;Dynamic on-chip termination;ZQ calibration function | |
| Memory Format | DDR3 SDRAM | |
| Current - Supply | - |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This 4Gb Double Data Rate 3 (DDR3(L)) DRAM is a high-speed CMOS synchronous DRAM containing 4,294,967,296 bits of storage. It is internally configured as an eight-bank architecture. The 4Gb die is organized as 64M bits × 8 I/O × 8 banks and 32M bits × 16 I/O × 8 banks. These synchronous devices achieve high-speed DDR transfer rates of up to 2133 Mb/s/pin, suitable for general-purpose applications. The die is designed to comply with all key DDR3(L) DRAM features, with all control and address inputs synchronized to a pair of externally supplied differential clocks. Inputs are latched at the crossing point of the differential clock (rising edge of CK and falling edge of CK̄). All I/Os are source-synchronous, referenced to either a single-ended data strobe or a differential data strobe pair. These devices operate from a 1.5V ± 0.075V or 1.35V -0.067V/+0.1V single power supply and are available in BGA packages.
Features
- Compliant with JEDEC DDR3 standard
- 8n prefetch architecture
- Differential clock (CK/CK) and data strobe (DQS/DQS)
- Double data rate on data I/O, data strobe, and data mask
- Auto self-refresh via on-die temperature sensor (DRAM)
- Auto refresh and self-refresh modes
- Partial array self-refresh
- Power-down mode
- Configurable drive strength for improved system compatibility
- Configurable on-die termination (ODT)
- ZQ calibration via external ZQ pin (240Ω ± 1%) for drive strength/ODT impedance accuracy
- Write leveling via mode register settings
- Read leveling via multipurpose register
- Interface and power supply: DDR3 SSTL_15, VDD/VDDQ = 1.5V (±0.075V); DDR3L SSTL_135, VDD/VDDQ = 1.35V (-0.067V / +0.1V)
- Speed grades: 2133 Mbps / 14-14-14, 1866 Mbps / 13-13-13, 1600 Mbps / 11-11-11
- Temperature range: Commercial = 0°C ~ 95°C, Quasi-Industrial (-T) = -40°C ~ 95°C, Industrial (-I) = -40°C ~ 95°C, Automotive Grade 2 (-H) = -40°C ~ 105°C, Automotive Grade 3 (-A) = -40°C ~ 95°C
- Programmable features: CAS latency, CAS write latency, additive latency, write recovery time, burst type, burst length, self-refresh temperature range, output driver impedance, ODT nominal value, ODT write value, precharge power-down mode
- Package/density: Lead-free RoHS compliant and halogen-free
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |



