TI JFE150DCKR

JFE150 is a discrete JFET built using a modern high-performance analog bipolar process. The JFE150 delivers performance not available with older discrete JFET technologies. It offers excellent noise-power efficiency and flexibility, with quiescent current user-settable and outstanding noise performance for currents ranging from 50μA to 20mA. At a bias current of 5mA, the device achieves an input-referred noise of 0.8nV/√Hz, providing ultra-low noise performance with extremely high input impedance (>1TΩ). The JFE150 also features integrated diodes connected to independent clamp nodes, offering protection without the need for high-leakage, nonlinear external diodes. The JFE150 supports a high drain-to-source voltage of 40V, as well as gate-to-source and gate-to-drain voltages down to −40V. The device is rated for an operating temperature range of −40°C to +125°C and is available in 5-pin SOT-23 and SC70 packages.

• Ultra-low noise:
  • Voltage noise: 0.6nV/√Hz at 1kHz, IDS = 5mA; 0.9nV/√Hz at 1kHz, IDS = 2mA
  • Current noise: 1.8fA/√Hz at 1kHz
• Low gate current: 10pA (max)
• Low input capacitance: 24pF at VDS = 5V
• High gate-drain and gate-source breakdown voltage: -40V
• High transconductance: 68mS
• Package: compact SC70 and SOT-23

• Microphone input
• Hydrophones and marine equipment
• DJ controllers, mixers, and other DJ equipment
• Professional audio mixers or control surfaces
• Guitar amplifiers and other instrument amplifiers
• Condition monitoring sensors