ALLPOWER AP3003
| Manufacturer | ALLPOWERAsian Brands |
| MPN | AP3003 |
| LCSC Part # | C2936847 |
| Packaging | SOT-23-6 |
| Customer # | |
| Key Attributes | MOSFET N-CH+P-CH ARR 30V 5.8A SOT-23-6 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ALLPOWER | |
| Packaging | SOT-23-6 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 66pF | |
| Current - Continuous Drain(Id) | 5.8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF | |
| RDS(on) | 38mΩ@4.5V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 700pF | |
| Gate Charge(Qg) | 4.8nC@4.5V | |
| Type | N-Channel + P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ALLPOWER | |
| Packaging | SOT-23-6 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 66pF | |
| Current - Continuous Drain(Id) | 5.8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF | |
| RDS(on) | 38mΩ@4.5V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 700pF | |
| Gate Charge(Qg) | 4.8nC@4.5V | |
| Type | N-Channel + P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
UTC 7N65-ML is a high-voltage power MOSFET featuring an advanced trench MOSFET design with superior characteristics, including fast switching time, low gate charge, low on-resistance, and high avalanche ruggedness. This power MOSFET is typically used in high-speed switching applications for switched-mode power supplies and adapters.
Features
AI Translation
- N-Channel: VDD = 30V, ID = 5.8A
- RDS(ON) < 38mΩ @ VGS = 4.5V Typ = 24mΩ
- RDS(ON) < 58mΩ @ VGS = 2.5V Typ = 35mΩ
- P-Channel: VDD = -30V, ID = -4.2A
- RDS(ON) < 68mΩ @ VGS = -4.5V Typ = 53mΩ
- RDS(ON) < 96mΩ @ VGS = -2.5V Typ = 75mΩ
- Lead free product is acquired
- High power and current handing capability
- Surface mount package
Applications
AI Translation
- Interfacing Switching
- Load Switching
- Power management
In-Stock: 36,130
36,130 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.1334 | $ 1.33 |
| 100+ | $ 0.1223 | $ 12.23 |
| 300+ | $ 0.1168 | $ 35.04 |
| 3,000+ | $ 0.0801 | $ 240.30 |
| 6,000+ | $ 0.0768 | $ 460.80 |
| 9,000+ | $ 0.0752 | $ 676.80 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ALLPOWER | |
| Packaging | SOT-23-6 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 66pF | |
| Current - Continuous Drain(Id) | 5.8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF | |
| RDS(on) | 38mΩ@4.5V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 700pF | |
| Gate Charge(Qg) | 4.8nC@4.5V | |
| Type | N-Channel + P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ALLPOWER | |
| Packaging | SOT-23-6 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 66pF | |
| Current - Continuous Drain(Id) | 5.8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF | |
| RDS(on) | 38mΩ@4.5V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 700pF | |
| Gate Charge(Qg) | 4.8nC@4.5V | |
| Type | N-Channel + P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
UTC 7N65-ML is a high-voltage power MOSFET featuring an advanced trench MOSFET design with superior characteristics, including fast switching time, low gate charge, low on-resistance, and high avalanche ruggedness. This power MOSFET is typically used in high-speed switching applications for switched-mode power supplies and adapters.
Features
AI Translation
- N-Channel: VDD = 30V, ID = 5.8A
- RDS(ON) < 38mΩ @ VGS = 4.5V Typ = 24mΩ
- RDS(ON) < 58mΩ @ VGS = 2.5V Typ = 35mΩ
- P-Channel: VDD = -30V, ID = -4.2A
- RDS(ON) < 68mΩ @ VGS = -4.5V Typ = 53mΩ
- RDS(ON) < 96mΩ @ VGS = -2.5V Typ = 75mΩ
- Lead free product is acquired
- High power and current handing capability
- Surface mount package
Applications
AI Translation
- Interfacing Switching
- Load Switching
- Power management
C2936847 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
