Infineon IRFP4668PBF
| Manufacturer | |
| MPN | IRFP4668PBF |
| LCSC Part # | C2921 |
| Packaging | TO-247AC |
| Customer # | |
| Key Attributes | MOSFET N-CH 200V 130A TO-247AC |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247AC | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 810pF | |
| Current - Continuous Drain(Id) | 130A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 520W | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 9.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 10.72nF | |
| Gate Charge(Qg) | 241nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche SOA
- Enhanced body diode dV/dt and dl/dt Capability
- Lead-Free
Applications
AI Translation
- High Efficiency Synchronous Rectification in SMPS
- Uninterruptible Power Supply
- High Speed Power Switching
- Hard Switched and High Frequency Circuits
In-Stock: 8,999
8,999 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.9322 | $ 1.93 |
| 10+ | $ 1.7284 | $ 17.28 |
| 25+ | $ 1.3908 | $ 34.77 |
| 100+ | $ 1.2604 | $ 126.04 |
| 500+ | $ 1.2001 | $ 600.05 |
| 1,000+ | $ 1.174 | $ 1174.00 |
Standard Packaging25/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247AC | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 810pF | |
| Current - Continuous Drain(Id) | 130A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 520W | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 9.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 10.72nF | |
| Gate Charge(Qg) | 241nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche SOA
- Enhanced body diode dV/dt and dl/dt Capability
- Lead-Free
Applications
AI Translation
- High Efficiency Synchronous Rectification in SMPS
- Uninterruptible Power Supply
- High Speed Power Switching
- Hard Switched and High Frequency Circuits
C2921 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



