Name: SAMSUNG K4A8G085WC-BIWE
Brand: SAMSUNG
SKU: C2920124
Price: 9.4823 USD
Availability: OutOfStock

JEDEC-compliant 1.2V operating voltage (range 1.14V~1.26V)
VDDQ = 1.2V (range 1.14V~1.26V)
Multiple operating frequencies and data rates: 800 MHz fCK at 1600 Mb/s/pin, 933 MHz fCK at 1866 Mb/s/pin, 1067 MHz fCK at 2133 Mb/s/pin, 1200 MHz fCK at 2400 Mb/s/pin, 1333 MHz fCK at 2666 Mb/s/pin, 1467 MHz fCK at 2933 Mb/s/pin, 1600 MHz fCK at 3200 Mb/s/pin
16 banks (organized as 4 bank groups)
Programmable CAS Latency (Posted CAS): 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 24
Programmable Additive Latency: 0, CL-2, or CL-1 clock cycles
Programmable CAS Write Latency (CWL): 9, 11 (DDR4-1600), 10, 12 (DDR4-1866), 11, 14 (DDR4-2133), 12, 16 (DDR4-2400), 14, 18 (DDR4-2666), and 16, 20 (DDR4-3200)
8-bit prefetch
Burst Length: 8; BC4 when tCCD=4 (no on-the-fly read/write, switchable dynamically via A12 or Mode Register Set)
Bidirectional differential data strobe
Internal (self) calibration via ZQ pin (reference resistor RZQ: 240Ω ± 1%)
On-Die Termination (ODT) via ODT pin
Average refresh interval: 7.8us when TCASE < 85°C; 3.9us when 85°C < TCASE ≤ 95°C
Industrial temperature range support (-40~95°C)
tREFI: 7.8us when -40°C ≤ TCASE ≤ 85°C
tREFI: 3.9us when 85°C < TCASE ≤ 95°C
Connectivity Test Mode (TEN) support

JEDEC-compliant 1.2V operating voltage (range 1.14V~1.26V)
VDDQ = 1.2V (range 1.14V~1.26V)
Multiple operating frequencies and data rates: 800 MHz fCK at 1600 Mb/s/pin, 933 MHz fCK at 1866 Mb/s/pin, 1067 MHz fCK at 2133 Mb/s/pin, 1200 MHz fCK at 2400 Mb/s/pin, 1333 MHz fCK at 2666 Mb/s/pin, 1467 MHz fCK at 2933 Mb/s/pin, 1600 MHz fCK at 3200 Mb/s/pin
16 banks (organized as 4 bank groups)
Programmable CAS Latency (Posted CAS): 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 24
Programmable Additive Latency: 0, CL-2, or CL-1 clock cycles
Programmable CAS Write Latency (CWL): 9, 11 (DDR4-1600), 10, 12 (DDR4-1866), 11, 14 (DDR4-2133), 12, 16 (DDR4-2400), 14, 18 (DDR4-2666), and 16, 20 (DDR4-3200)
8-bit prefetch
Burst Length: 8; BC4 when tCCD=4 (no on-the-fly read/write, switchable dynamically via A12 or Mode Register Set)
Bidirectional differential data strobe
Internal (self) calibration via ZQ pin (reference resistor RZQ: 240Ω ± 1%)
On-Die Termination (ODT) via ODT pin
Average refresh interval: 7.8us when TCASE < 85°C; 3.9us when 85°C < TCASE ≤ 95°C
Industrial temperature range support (-40~95°C)
tREFI: 7.8us when -40°C ≤ TCASE ≤ 85°C
tREFI: 3.9us when 85°C < TCASE ≤ 95°C
Connectivity Test Mode (TEN) support

Manufacturer	SAMSUNG
MPN	K4A8G085WC-BIWE
LCSC Part #	C2920124
Packaging	FBGA-78
Customer #
Key Attributes	1.2V 8Gbit 1Gx8 DDR4 FBGA-78 Memory (ICs) RoHS
Datasheet	SAMSUNG K4A8G085WC-BIWE

Type	Description	All
Category	Integrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturer	SAMSUNG
Packaging	FBGA-78
Voltage - Supply	1.2V
Memory Size	8Gbit
Operating temperature	-40℃~+95℃
Memory Format	1Gx8
Interface	DDR4

Qty	Unit Price(Reference Only)	Total Amount
1+	$ 11.7402	$ 11.74
10+	$ 11.2082	$ 112.08
30+	$ 10.2865	$ 308.60
100+	$ 9.4823	$ 948.23
Standard Packaging2000/Full Reel

Type	Description	All
Category	Integrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturer	SAMSUNG
Packaging	FBGA-78
Voltage - Supply	1.2V
Memory Size	8Gbit
Operating temperature	-40℃~+95℃
Memory Format	1Gx8
Interface	DDR4

SAMSUNG K4A8G085WC-BIWE

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