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ST STGWT30HP65FBRoHS

Manufacturer
ST
MPN
STGWT30HP65FB
LCSC Part #
C2917578
Packaging
TO-3P
Customer #
Key Attributes
Trench gate field-stop 650 V, 30 A high speed HB series IGBT
Datasheetpdf iconST STGWT30HP65FB
In-Stock: 161
161 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.237$ 1.24
10+$ 1.0287$ 10.29
30+$ 0.9131$ 27.39
100+$ 0.7829$ 78.29
500+$ 0.7259$ 362.95
1,000+$ 0.6999$ 699.90
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerST
PackagingTO-3P
Td(off)146ns
Pd - Power Dissipation260W
Td(on)-
Operating Temperature-55℃~+175℃
Current - Collector(Ic)60A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)76pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@1mA
Vce Saturation(VCE(sat))2V@30A,15V
Collector Cut-Off Current (Ices)-
Reverse Recovery Time(trr)140ns
Switching Energy(Eoff)293uJ
Turn-On Energy (Eon)-
Input Capacitance(Cies)3.659nF
Gate Charge(Qg)149nC@15V
Output Capacitance(Coes)101pF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features

AI Translation
  • Maximum junction temperature: T_J = 175 °C
  • High speed switching series
  • Minimized tail current
  • Low saturation voltage: V_CE(sat) = 1.6 V (typ.) @ I_C = 40 A
  • Tight parameter distribution
  • Safe paralleling
  • Positive V_CE(sat) temperature coefficient
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode

Applications

AI Translation
  • Power factor corrector (PFC)