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TECH PUBLIC 2N7002KDWRoHS

Manufacturer
TECH PUBLICAsian Brands
MPN
2N7002KDW
LCSC Part #
C2912545
Packaging
SOT-363
Customer #
Key Attributes
MOSFET N-CH 60V 0.3A SOT-363
Datasheetpdf iconTECH PUBLIC 2N7002KDW
In-Stock: 9,200
9,200 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0385$ 0.77
200+$ 0.0298$ 5.96
600+$ 0.0249$ 14.94
3,000+$ 0.022$ 66.00
9,000+$ 0.0195$ 175.50
21,000+$ 0.0181$ 380.10
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTECH PUBLIC
PackagingSOT-363
Drain to Source Voltage60V
Output Capacitance(Coss)18pF
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation350mW
RDS(on)2.5Ω@10V
Reverse Transfer Capacitance (Crss@Vds)2pF
Number2 N-Channel
Input Capacitance(Ciss)27pF
Gate Charge(Qg)3nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This advanced high-voltage MOSFET is designed to withstand high energy in avalanche mode and achieve high-efficiency switching. This new high-energy device also features fast reverse recovery time of the drain-source diode. Suitable for high-voltage, high-speed switching applications such as power supplies, converters, motor drives, and bridge circuits.

Features

AI Translation
  • Fast switching
  • Green Device Available
  • Suit for 1.5V Gate Drive Applications

Applications

AI Translation
  • Notebook
  • Load Switch
  • Networking
  • Hand-held Instruments