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FUDAN MICRO FM25S01A-DND-A-G product image
  • FM25S01A-DND-A-G thumbnail 1
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FUDAN MICRO FM25S01A-DND-A-GRoHS

Manufacturer
FUDAN MICROAsian Brands
MPN
FM25S01A-DND-A-G
LCSC Part #
C2912086
Packaging
WSON-8-EP(6x8)
Customer #
Key Attributes
1Gbit 2.7V~3.6V 104MHz SPI WSON-8-EP(6x8) Memory (ICs) RoHS
Datasheetpdf iconFUDAN MICRO FM25S01A-DND-A-G
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.2746$ 1.27
10+$ 1.0575$ 10.58
30+$ 0.939$ 28.17
105+$ 0.8051$ 84.54
495+$ 0.7451$ 368.82
1,005+$ 0.7189$ 722.49
Standard Packaging15/Full Tube
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerFUDAN MICRO
PackagingWSON-8-EP(6x8)
Memory Size1Gbit
Voltage - Supply2.7V~3.6V
Operating temperature-40℃~+85℃
Program / Erase Cycles-
Clock Frequency104MHz
FeaturesRead buffer function;Copy back write function;Write enable latch;Software reset function;Hardware write protection function;Software write protection function;ECC error correction function;OTP region write protection and lock function
Data Retention - TDR (Year)10 years
Block Erase Time(tBE)4ms
Write Cycle Time(tWC)-
Page Programming Time (Tpp)400us
Standby Supply Current-
InterfaceSPI
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging15
Sales UnitPiece

Introduction

AI Translation

The FM25S01A is a 1G-bit (128M-byte) SPI (Serial Peripheral Interface) NAND Flash memory, with advanced write protection mechanisms. The FM25S01A supports the standard Serial Peripheral Interface (SPI), Dual/Quad I/O option.

Features

AI Translation
  • Single-level cell (SLC) technology
  • Page size: 2112bytes(2048 + 64bytes)
  • Block size: 64 pages(128K + 4K bytes)
  • Device size: 1Gb(1024 blocks)
  • Standard SPI: CLK, CS#, DI, DO, WP#
  • Dual SPI: CLK, CS#, DQ0, DQ1, WP#
  • Quad SPI: CLK, CS#, DQ0, DQ1, DQ2, DQ3
  • High Performance
    • 104MHz for fast read
    • Quad I/O data transfer up to 416Mbits/s
  • Supply Voltage – FM25S01A: 2.7V~3.6V
  • Low Power, Wide Temperature Range
    • 20mA active current
    • -40~85℃ operating range
  • Program/Erase/Read Speed
    • PAGE PROGRAM time: 400µs typical
    • BLOCK ERASE time: 4ms typical
    • PAGE READ time: 100µs maximum (with ECC), 25µs maximum (without ECC)
  • Advanced Features for NAND
    • 1bit Internal ECC option, per 512 bytes
    • Software and Hardware Write-Protect
    • 32B Unique ID and 2KB parameter page
    • 25 OTP pages
    • INTERNAL DATA MOVE by page
    • Promised golden block0
  • Package WSON8 8x6mm (TDFN8 8x6mm)
  • All Packages are RoHS Compliant and Halogen-free
  • Minimum 100,000 Program/Erase Cycles
  • Data Retention: 10 years