JSMSEMI JSM2302A-A2SHB
| Manufacturer | JSMSEMIAsian Brands |
| MPN | JSM2302A-A2SHB |
| LCSC Part # | C2905536 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 3A SOT-23 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 900mW | |
| RDS(on) | 60mΩ@4.5V | |
| Number | 1 N-channel | |
| Vgs | ±8V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3A | |
| Operating Temperature - | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 900mW | |
| RDS(on) | 60mΩ@4.5V | |
| Number | 1 N-channel | |
| Vgs | ±8V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
N-channel MOSFET in SOT-23 plastic package.
Features
AI Translation
- Ultra-high density cell design technology
- Low R<sub>DS(ON)</sub>
- SOT-23 package
Applications
AI Translation
- Battery management
- High-speed switching
- Low-power DC-DC conversion
In-Stock: 59,320
59,320 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.03$ 0.0285 | $ 0.57 |
| 200+ | $ 0.0238$ 0.0227 | $ 4.54 |
| 600+ | $ 0.0204$ 0.0194 | $ 11.64 |
| 3,000+ | $ 0.0178$ 0.0170 | $ 51.00 |
| 9,000+ | $ 0.0161$ 0.0153 | $ 137.70 |
| 21,000+ | $ 0.0151$ 0.0144 | $ 302.40 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 900mW | |
| RDS(on) | 60mΩ@4.5V | |
| Number | 1 N-channel | |
| Vgs | ±8V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3A | |
| Operating Temperature - | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 900mW | |
| RDS(on) | 60mΩ@4.5V | |
| Number | 1 N-channel | |
| Vgs | ±8V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
N-channel MOSFET in SOT-23 plastic package.
Features
AI Translation
- Ultra-high density cell design technology
- Low R<sub>DS(ON)</sub>
- SOT-23 package
Applications
AI Translation
- Battery management
- High-speed switching
- Low-power DC-DC conversion
C2905536 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



