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ALLPOWER AP50N06KRoHS

Manufacturer
ALLPOWERAsian Brands
MPN
AP50N06K
LCSC Part #
C2903768
Packaging
TO-252-2L
Customer #
Key Attributes
MOSFET N-CH 60V 50A TO-252-2L
Datasheetpdf iconALLPOWER AP50N06K
In-Stock: 12,670
12,670 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1601$ 0.80
50+$ 0.1434$ 7.17
150+$ 0.135$ 20.25
500+$ 0.1287$ 64.35
2,500+$ 0.1237$ 309.25
5,000+$ 0.1212$ 606.00
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerALLPOWER
PackagingTO-252-2L
Drain to Source Voltage60V
Output Capacitance(Coss)185pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.65V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)20mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.92nF
Gate Charge(Qg)36nC@10V
TypeN-Channel
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Introduction

AI Translation

AP50N06K utilizes advanced trench technology and design to achieve excellent on-resistance [RDS(ON)] at low gate charge, suitable for a wide range of applications.

Features

AI Translation
  • Drain-source voltage (VDS) = 60V, drain current (ID) = 50A
  • On-resistance [RDS(ON)] < 20mΩ at VGS = 10V (typical: 13mΩ)
  • High-density cell design for ultra-low RDS(ON)
  • Full avalanche voltage and current ratings
  • High single-pulse avalanche energy (EAS) with excellent stability and consistency
  • Superior thermal dissipation package
  • High ESD capability via specialized process technology

Applications

AI Translation
  • Power switch applications
  • LED backlighting
  • Uninterruptible power supply