MSKSEMI MSK7804
| Manufacturer | MSKSEMIAsian Brands |
| MPN | MSK7804 |
| LCSC Part # | C2902916 |
| Packaging | DFN-8-EP(3.2x3.1) |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 30V 30A DFN-8-EP(3.2x3.1) |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | DFN-8-EP(3.2x3.1) | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 131pF | |
| Current - Continuous Drain(Id) | 30A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 109pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 940pF | |
| Gate Charge(Qg) | 9.63nC@4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | DFN-8-EP(3.2x3.1) | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 131pF | |
| Current - Continuous Drain(Id) | 30A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 109pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 940pF | |
| Gate Charge(Qg) | 9.63nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The MSK7804 utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- 700 V @ T_J = 150°C
- Typical R DS(on) = 15 mΩ
- Ultra-low gate charge (typical Q_g = 282 nC)
- Low effective output capacitance (typical C_oss(eff.) = 2495 pF)
- 100% avalanche tested
- Lead-free and RoHS compliant
Applications
AI Translation
- Lithium battery protection - Wireless charging - Fast charging for mobile phones
In-Stock: 3,105
3,105 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2432$ 0.2189 | $ 1.09 |
| 50+ | $ 0.2138$ 0.1925 | $ 9.63 |
| 150+ | $ 0.2011$ 0.1810 | $ 27.15 |
| 500+ | $ 0.1854$ 0.1669 | $ 83.45 |
| 2,500+ | $ 0.1784$ 0.1606 | $ 401.50 |
| 5,000+ | $ 0.1742$ 0.1568 | $ 784.00 |
Standard Packaging5000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | DFN-8-EP(3.2x3.1) | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 131pF | |
| Current - Continuous Drain(Id) | 30A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 109pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 940pF | |
| Gate Charge(Qg) | 9.63nC@4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | DFN-8-EP(3.2x3.1) | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 131pF | |
| Current - Continuous Drain(Id) | 30A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 109pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 940pF | |
| Gate Charge(Qg) | 9.63nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The MSK7804 utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- 700 V @ T_J = 150°C
- Typical R DS(on) = 15 mΩ
- Ultra-low gate charge (typical Q_g = 282 nC)
- Low effective output capacitance (typical C_oss(eff.) = 2495 pF)
- 100% avalanche tested
- Lead-free and RoHS compliant
Applications
AI Translation
- Lithium battery protection - Wireless charging - Fast charging for mobile phones
C2902916 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



