JSMSEMI JSM10N15
| Manufacturer | JSMSEMIAsian Brands |
| MPN | JSM10N15 |
| LCSC Part # | C2900591 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 150V 10A TO-252 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 74pF | |
| Current - Continuous Drain(Id) | 10A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 54W | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 450mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 660pF | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 74pF | |
| Current - Continuous Drain(Id) | 10A | |
| Operating Temperature - | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 54W | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 450mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 660pF | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
- Trench power MOSFET technology
- Excellent thermal dissipation package
- High-density cell design for low Rds(on)
- Moisture Sensitivity Level 1
- Epoxy meets UL 94 V-0 flammability rating
- Halogen-free
Features
AI Translation
-
- Drain-Source Voltage (V_DS): 150V
-
- Drain Current (I_D): 10A
-
- On-State Resistance (R_DS(on)) (at V_GS = 10V): <300mΩ
-
- 100% EAS tested
-
- 100% V_DS tested
Applications
AI Translation
- Power switching applications
- Uninterruptible power supplies
- DC-DC converters
- Motor drivers
In-Stock: 4,000
4,000 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3027$ 0.2876 | $ 1.44 |
| 50+ | $ 0.2427$ 0.2306 | $ 11.53 |
| 150+ | $ 0.2169$ 0.2061 | $ 30.92 |
| 500+ | $ 0.1849$ 0.1757 | $ 87.85 |
| 2,500+ | $ 0.1706$ 0.1621 | $ 405.25 |
| 5,000+ | $ 0.162$ 0.1539 | $ 769.50 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 74pF | |
| Current - Continuous Drain(Id) | 10A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 54W | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 450mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 660pF | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 74pF | |
| Current - Continuous Drain(Id) | 10A | |
| Operating Temperature - | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 54W | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 450mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 660pF | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
- Trench power MOSFET technology
- Excellent thermal dissipation package
- High-density cell design for low Rds(on)
- Moisture Sensitivity Level 1
- Epoxy meets UL 94 V-0 flammability rating
- Halogen-free
Features
AI Translation
-
- Drain-Source Voltage (V_DS): 150V
-
- Drain Current (I_D): 10A
-
- On-State Resistance (R_DS(on)) (at V_GS = 10V): <300mΩ
-
- 100% EAS tested
-
- 100% V_DS tested
Applications
AI Translation
- Power switching applications
- Uninterruptible power supplies
- DC-DC converters
- Motor drivers
C2900591 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



