YFW 2N7002AK
| Manufacturer | YFWAsian Brands |
| MPN | 2N7002AK |
| LCSC Part # | C2898356 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 200mA SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | YFW | |
| Packaging | SOT-23 | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 200mA | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 3.9Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 17pF | |
| Gate Charge(Qg) | 350pC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- ESD protected gate
- Low ON - resistance RDS(on)=2.8 Ω (typ.) (@VGS = 10 V)
- RDS(on)=3.1 Ω (typ.) (@VGS = 5 V)
- RDS(on)=3.2 Ω (typ.) (@VGS = 4.5 V)
Applications
AI Translation
- High Speed Switching Applications
In-Stock: 780
780 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0224 | $ 0.45 |
| 200+ | $ 0.0177 | $ 3.54 |
| 600+ | $ 0.0151 | $ 9.06 |
| 3,000+ | $ 0.0118 | $ 35.40 |
| 9,000+ | $ 0.0105 | $ 94.50 |
| 21,000+ | $ 0.0097 | $ 203.70 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | YFW | |
| Packaging | SOT-23 | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 200mA | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 3.9Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 17pF | |
| Gate Charge(Qg) | 350pC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- ESD protected gate
- Low ON - resistance RDS(on)=2.8 Ω (typ.) (@VGS = 10 V)
- RDS(on)=3.1 Ω (typ.) (@VGS = 5 V)
- RDS(on)=3.2 Ω (typ.) (@VGS = 4.5 V)
Applications
AI Translation
- High Speed Switching Applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



