Winsok Semicon WSG02P06
| Manufacturer | Winsok SemiconAsian Brands |
| MPN | WSG02P06 |
| LCSC Part # | C2880466 |
| Packaging | SOT-223 |
| Customer # | |
| Key Attributes | MOSFET P-CH 60V 2A SOT-223 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Winsok Semicon | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 12pF | |
| Current - Continuous Drain(Id) | 2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| RDS(on) | 215mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 364pF | |
| Gate Charge(Qg) | 6.3nC@4.5V | |
| Type | P-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low inline power loss are needed in a very small outline surface mount package.
Features
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- 100% EAS Guaranteed
- Green Device Available
Applications
- High Frequency Point-of-Load Synchronous Buck Converter
- Networking DC-DC Power System
- Load Switch
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.1479 | $ 0.15 |
| 10+ | $ 0.1419 | $ 1.42 |
| 30+ | $ 0.1296 | $ 3.89 |
| 100+ | $ 0.1086 | $ 10.86 |
| 500+ | $ 0.0992 | $ 49.60 |
| 1,000+ | $ 0.0936 | $ 93.60 |
Standard Packaging3000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Winsok Semicon | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 12pF | |
| Current - Continuous Drain(Id) | 2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| RDS(on) | 215mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 364pF | |
| Gate Charge(Qg) | 6.3nC@4.5V | |
| Type | P-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low inline power loss are needed in a very small outline surface mount package.
Features
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- 100% EAS Guaranteed
- Green Device Available
Applications
- High Frequency Point-of-Load Synchronous Buck Converter
- Networking DC-DC Power System
- Load Switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
