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TI UCC27210D product image
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TI UCC27210DRoHS

Manufacturer
TI
MPN
UCC27210D
LCSC Part #
C2878269
Packaging
SOIC-8
Customer #
Key Attributes
High-frequency high-side/low-side driver with 120V step-up and 4A peak current
Datasheetpdf iconTI UCC27210D
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QtyUnit Price(Reference Only)Total Amount
1+$ 3.6727$ 3.67
10+$ 3.1465$ 31.47
30+$ 2.8344$ 85.03
100+$ 2.5178$ 251.78
500+$ 2.3725$ 1186.25
1,000+$ 2.3067$ 2306.70
Standard Packaging75/Full Tube
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerTI
PackagingSOIC-8
Input Logic Level - Low2.4V~4V
Low Level Delay Time24ns
High Level Delay Time21ns
Quiescent Current85uA
Input Logic Level - High4.2V~5.8V
Operating Temperature-40℃~+140℃
Voltage - Supply8V~17V
Driven ConfigurationHalf-Bridge
Current - Output Low(IOL)4A
Rise Time7.2ns
Fall Time5.5ns
FeaturesUnder Voltage Protection;Built-in bootstrap diode
Current - Output High(IOH)4A
Load TypeMOSFET
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging75
Sales UnitPiece

Introduction

AI Translation

The UCC27210 and UCC27211 drivers are based on the popular UCC27200 and UCC27201 MOSFET drivers, but with significantly improved performance. The peak output pull-up and pull-down currents are increased to 4A source current and 4A sink current, and the pull-up and pull-down resistances are reduced to 0.9Ω, enabling the drivers to drive high-power MOSFETs with minimal switching losses during the Miller plateau transition of the MOSFET. The input structure can directly handle -10 VDC, improving robustness, and can be directly interfaced with gate drive transformers without the need for rectifier diodes. These inputs are independent of the supply voltage and have a maximum rating of 20V. The switching node (HS pin) of the UCC2721x can handle up to -18V, protecting the high-side channel from the negative voltages inherent in parasitic inductance and stray capacitance. The UCC27210 (pseudo-CMOS input) and UCC27211 (TTL input) add hysteresis characteristics, enhancing the immunity to the interface with analog or digital pulse-width modulation (PWM) controllers. The low-side and high-side gate drivers are independently controlled, achieving a 2ns delay matching between their turn-on and turn-off. A bootstrap diode rated at 120V is integrated on the chip, eliminating the need for an external discrete diode. Both the high-side and low-side drivers are equipped with undervoltage lockout functions, providing symmetrical turn-on and turn-off behavior and forcing the output low when the drive voltage is below the specified threshold. Both devices are available in 8-pin SOIC (D), PowerPAD SOIC-8 (DDA), 4mm×4mm SON-8 (DRM), and SON-10 (DPR) packages.

Features

AI Translation
  • Drives two N-channel MOSFETs in high-side/low-side configuration via independent inputs
  • Maximum bootstrap voltage 120V DC
  • 4A sink, 4A source output current
  • 0.9Ω pull-up and pull-down resistance
  • Input pins tolerant of -10V to 20V regardless of supply voltage range
  • TTL or pseudo-CMOS compatible input versions
  • 8V to 17V VDD operating range (20V absolute maximum)
  • 7.2ns rise time and 5.5ns fall time (with 1000pF load)
  • Short propagation delay (typical 18ns)
  • 2ns delay matching
  • Symmetrical UVLO for high-side and low-side drivers
  • Available in all industry-standard packages (SOIC-8, PowerPAD SOIC-8, 4mm×4mm SON-8, and 4mm×4mm SON-10)
  • -40°C to 140°C rated temperature range

Applications

AI Translation
  • Power supplies for telecom, datacom, and commercial applications
  • Half-bridge and full-bridge converters
  • Push-pull converters
  • High-voltage synchronous buck converters
  • Two-switch forward converters
  • Active clamp forward converters
  • Class D audio amplifiers