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TI CSD19532KTTT product image
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TI CSD19532KTTTRoHS

Manufacturer
MPN
CSD19532KTTT
LCSC Part #
C2877341
Packaging
TO-263-3
Customer #
Key Attributes
MOSFET N-CH 100V 200A TO-263-3
Datasheetpdf iconTI CSD19532KTTT
In-Stock: 70
70 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 5.5983$ 5.60
200+$ 2.4305$ 486.10
500+$ 2.3602$ 1180.10
1,000+$ 2.3255$ 2325.50
Standard Packaging50/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTI
PackagingTO-263-3
Drain to Source Voltage100V
Output Capacitance(Coss)674pF
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.2V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)5.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.06nF
Gate Charge(Qg)57nC@10V
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

This 100V, 4.6mΩ, D2PAK (TO-263) power MOSFET is designed to minimize losses in power conversion applications.

Features

AI Translation
  • Ultra-low Qg and Qgd
  • Low thermal resistance
  • Avalanche-rated
  • Lead-free terminal plating
  • RoHS compliant
  • Halogen-free
  • D2PAK plastic package

Applications

AI Translation
  • Secondary-side synchronous rectifier
  • Hot swap
  • Motor control