TI CSD19532KTTT
| Manufacturer | |
| MPN | CSD19532KTTT |
| LCSC Part # | C2877341 |
| Packaging | TO-263-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 200A TO-263-3 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | TO-263-3 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 674pF | |
| Current - Continuous Drain(Id) | 200A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.2V | |
| Pd - Power Dissipation | 250W | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 5.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.06nF | |
| Gate Charge(Qg) | 57nC@10V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This 100V, 4.6mΩ, D2PAK (TO-263) power MOSFET is designed to minimize losses in power conversion applications.
Features
AI Translation
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche-rated
- Lead-free terminal plating
- RoHS compliant
- Halogen-free
- D2PAK plastic package
Applications
AI Translation
- Secondary-side synchronous rectifier
- Hot swap
- Motor control
In-Stock: 70
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 5.5983 | $ 5.60 |
| 200+ | $ 2.4305 | $ 486.10 |
| 500+ | $ 2.3602 | $ 1180.10 |
| 1,000+ | $ 2.3255 | $ 2325.50 |
Standard Packaging50/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | TO-263-3 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 674pF | |
| Current - Continuous Drain(Id) | 200A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.2V | |
| Pd - Power Dissipation | 250W | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 5.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.06nF | |
| Gate Charge(Qg) | 57nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This 100V, 4.6mΩ, D2PAK (TO-263) power MOSFET is designed to minimize losses in power conversion applications.
Features
AI Translation
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche-rated
- Lead-free terminal plating
- RoHS compliant
- Halogen-free
- D2PAK plastic package
Applications
AI Translation
- Secondary-side synchronous rectifier
- Hot swap
- Motor control
C2877341 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

