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TI CSD19531Q5ATRoHS

Manufacturer
TI
MPN
CSD19531Q5AT
LCSC Part #
C2876525
Packaging
VSONP-8(5x6)
Customer #
Key Attributes
MOSFET N-CH 100V 110A VSONP-8(5x6)
Datasheetpdf iconTI CSD19531Q5AT
In-Stock: 33
33 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.1486$ 2.15
10+$ 1.8307$ 18.31
30+$ 1.6329$ 48.99
250+$ 1.4286$ 357.15
500+$ 1.3378$ 668.90
1,000+$ 1.2973$ 1297.30
Standard Packaging250/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTI
PackagingVSONP-8(5x6)
Drain to Source Voltage100V
Output Capacitance(Coss)728pF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)16.9pF
RDS(on)7.8mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)3.87nF
Gate Charge(Qg)48nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging250
Sales UnitPiece

Introduction

AI Translation

This 100V, 5.3mΩ, SON 5mm x 6mm NexFET power MOSFET is designed to significantly reduce losses in power conversion applications.

Features

AI Translation
  • Ultra-low Qg and Qgd
  • Low thermal resistance
  • Avalanche rated
  • Lead-free terminal finish
  • RoHS compliant
  • Halogen-free
  • Small Outline No-lead (SON) 5mm x 6mm plastic package

Applications

AI Translation
  • Primary-side telecom applications
  • Secondary-side synchronous rectifiers
  • Motor control