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TI LM5109BQNGTRQ1 product image
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TI LM5109BQNGTRQ1RoHS

Manufacturer
TI
MPN
LM5109BQNGTRQ1
LCSC Part #
C2876136
Packaging
WSON-8-EP(4x4)
Customer #
Key Attributes
LM5109B-Q1 High-Voltage 1A Peak Half-Bridge Gate Driver
Datasheetpdf iconTI LM5109BQNGTRQ1
In-Stock: 4,389
4,389 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.2293$ 1.23
10+$ 1.0062$ 10.06
30+$ 0.8841$ 26.52
100+$ 0.7457$ 74.57
500+$ 0.6838$ 341.90
1,000+$ 0.6562$ 656.20
Standard Packaging4500/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerTI
PackagingWSON-8-EP(4x4)
Input Logic Level - Low-
Low Level Delay Time32ns
High Level Delay Time30ns
Quiescent Current300uA
Input Logic Level - High800mV~2.2V
Operating Temperature-40℃~+125℃
Voltage - Supply8V~14V
Driven ConfigurationHalf-Bridge;High Side;Low Side
Current - Output Low(IOL)1A
Rise Time15ns
Fall Time15ns
FeaturesUnder Voltage Protection;-
Current - Output High(IOH)1A
Load TypeMOSFET
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4500
Sales UnitPiece

Introduction

AI Translation

The LM5109B-Q1 is a cost-effective high-voltage gate driver designed to drive high-side and low-side N-channel MOSFETs in a synchronous buck or half-bridge configuration. The floating high-side driver can operate with supply rail voltages up to 90V. The outputs are independently controlled through TTL/CMOS-compatible logic input thresholds. The robust level-shifting technology offers both high operating speed and low power consumption, and provides clean level shifting from the control input logic to the high-side gate driver. The device provides undervoltage lockout on both the low-side and high-side supply rails. The device is available in a thermally enhanced WSON(8) package.

Features

AI Translation
  • Qualified for automotive applications with the following AEC-Q100 results:
    • Device temperature grade 1
    • Device HBM ESD classification level 1C
    • Device CDM ESD classification level C4A
  • Drives high-side and low-side N-channel MOSFETs
  • 1A peak output current (1.0A sink / 1.0A source)
  • Independent TTL/CMOS compatible inputs
  • Bootstrap supply voltage up to 108V (DC)
  • Short propagation time (30ns typical)
  • Drives 1000pF load with 15ns rise and fall times
  • Excellent propagation delay matching (2ns typical)
  • Supply rail UVLO

Applications

AI Translation
  • Push-pull converters
  • Half-bridge and full-bridge power converters
  • Solid-state motor drives
  • Double-switch forward power converters