JSMSEMI FDN338P
| Manufacturer | JSMSEMIAsian Brands |
| MPN | FDN338P |
| LCSC Part # | C2874698 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET 20V 1.6A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 75pF | |
| Current - Continuous Drain(Id) | 1.6A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| RDS(on) | 210mΩ@2.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 405pF | |
| Gate Charge(Qg) | 6nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This 63mΩ, 12V N-channel FemtoFET™ MOSFET is designed and optimized to minimize the space occupied in many handheld and mobile applications. This technology can significantly reduce the package size while replacing standard small-signal MOSFETs.
Features
AI Translation
- TrenchFET Power MOSFET
Applications
AI Translation
- Load Switch for Portable Devices
- DC/DC Converter
In-Stock: 1,340
1,340 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.043 | $ 0.43 |
| 100+ | $ 0.0338 | $ 3.38 |
| 300+ | $ 0.0292 | $ 8.76 |
| 3,000+ | $ 0.0246 | $ 73.80 |
| 6,000+ | $ 0.0218 | $ 130.80 |
| 9,000+ | $ 0.0204 | $ 183.60 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 75pF | |
| Current - Continuous Drain(Id) | 1.6A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| RDS(on) | 210mΩ@2.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 405pF | |
| Gate Charge(Qg) | 6nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This 63mΩ, 12V N-channel FemtoFET™ MOSFET is designed and optimized to minimize the space occupied in many handheld and mobile applications. This technology can significantly reduce the package size while replacing standard small-signal MOSFETs.
Features
AI Translation
- TrenchFET Power MOSFET
Applications
AI Translation
- Load Switch for Portable Devices
- DC/DC Converter
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



