JSMSEMI BSS138
| Manufacturer | JSMSEMIAsian Brands |
| MPN | BSS138 |
| LCSC Part # | C2874697 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 50V 0.22A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 50V | |
| Output Capacitance(Coss) | 13pF | |
| Current - Continuous Drain(Id) | 220mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 360mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 6Ω@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 27pF | |
| Gate Charge(Qg) | 2.4nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 50 |
| Multiple | 50 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This -20V, 7.7mΩ power MOSFET is designed to minimize losses in power conversion load management applications within a SON 3×3 package, which offers excellent thermal performance for its device size.
Features
AI Translation
- Low on-resistance.
- Fast switching speed.
- Drive circuits can be simple.
- Parallel use is easy.
- ESD protected 2KV HBM
Applications
AI Translation
- Interfacing, switching (50V, 100mA)
In-Stock: 7,450
7,450 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 50+ | $ 0.0127 | $ 0.64 |
| 500+ | $ 0.01 | $ 5.00 |
| 3,000+ | $ 0.0079 | $ 23.70 |
| 6,000+ | $ 0.007 | $ 42.00 |
| 24,000+ | $ 0.0062 | $ 148.80 |
| 45,000+ | $ 0.0058 | $ 261.00 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 50V | |
| Output Capacitance(Coss) | 13pF | |
| Current - Continuous Drain(Id) | 220mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 360mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 6Ω@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 27pF | |
| Gate Charge(Qg) | 2.4nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 50 |
| Multiple | 50 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This -20V, 7.7mΩ power MOSFET is designed to minimize losses in power conversion load management applications within a SON 3×3 package, which offers excellent thermal performance for its device size.
Features
AI Translation
- Low on-resistance.
- Fast switching speed.
- Drive circuits can be simple.
- Parallel use is easy.
- ESD protected 2KV HBM
Applications
AI Translation
- Interfacing, switching (50V, 100mA)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



