JSMSEMI IRLML6401TRPBF-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | IRLML6401TRPBF-JSM |
| LCSC Part # | C2874694 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 4.2A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 4.2A | |
| Operating Temperature - | -50℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.25W | |
| RDS(on) | 48mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 760pF | |
| Gate Charge(Qg) | 7.8nC@4.5V | |
| Type | P-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NexFET power MOSFETs are designed to significantly reduce power loss in power conversion applications.
Features
AI Translation
- Trench FET Power MOSFET
Applications
AI Translation
- Load Switch for Portable Devices
- DC/DC Converter
In-Stock: 3,850
3,850 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0603$ 0.0573 | $ 0.57 |
| 100+ | $ 0.0487$ 0.0463 | $ 4.63 |
| 300+ | $ 0.0429$ 0.0408 | $ 12.24 |
| 3,000+ | $ 0.0338$ 0.0322 | $ 96.60 |
| 6,000+ | $ 0.0303$ 0.0288 | $ 172.80 |
| 9,000+ | $ 0.0285$ 0.0271 | $ 243.90 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 4.2A | |
| Operating Temperature - | -50℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.25W | |
| RDS(on) | 48mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 760pF | |
| Gate Charge(Qg) | 7.8nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NexFET power MOSFETs are designed to significantly reduce power loss in power conversion applications.
Features
AI Translation
- Trench FET Power MOSFET
Applications
AI Translation
- Load Switch for Portable Devices
- DC/DC Converter
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



