LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
TI CSD86311W1723 product image
Images for reference only

TI CSD86311W1723RoHS

Manufacturer
TI
MPN
CSD86311W1723
LCSC Part #
C2872606
Packaging
DSBGA-12
Customer #
Key Attributes
Dual N-Channel, Current: 4.5A, Voltage: 25V
Datasheetpdf iconTI CSD86311W1723
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit Price(Reference Only)Total Amount
1+$ 1.0718$ 1.07
200+$ 0.4154$ 83.08
500+$ 0.4012$ 200.60
1,000+$ 0.3932$ 393.20
Standard Packaging3000/Full Reel
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerTI
PackagingDSBGA-12
Current - Continuous Drain(Id)4.5A
RDS(on)39mΩ@8V
Pd - Power Dissipation1.5W
Gate Threshold Voltage (Vgs(th))1.4V
Drain to Source Voltage25V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)13pF
Number2 N-Channel
Input Capacitance(Ciss)585pF
Gate Charge(Qg)3.1nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)325pF
Report an ErrorShow similar products (0) >

Introduction

AI Translation

This device is designed to achieve the lowest possible on-resistance and gate charge in the smallest possible package footprint, while delivering thermal performance in an ultra-thin profile. The low on-resistance and gate charge, combined with the small size and ultra-thin profile, make this device ideal for battery-powered, space-constrained applications in load management and DC-DC converter designs.

Features

AI Translation
  • Dual N-channel MOSFET
  • Common-source configuration
  • Compact 1.7 mm × 2.3 mm package
  • Ultra-low Qg and Qgd
  • Lead-free
  • RoHS compliant
  • Halogen-free

Applications

AI Translation
  • Battery Management
  • Battery Protection
  • DC-DC Converter