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TI CSD13306WRoHS

Manufacturer
TI
MPN
CSD13306W
LCSC Part #
C2872586
Packaging
DSBGA-6
Customer #
Key Attributes
MOSFET N-CH 12V 3.5A DSBGA-6
Datasheetpdf iconTI CSD13306W
In-Stock: 155
155 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.3054$ 1.53
50+$ 0.2444$ 12.22
150+$ 0.2147$ 32.21
500+$ 0.1882$ 94.10
3,000+$ 0.1809$ 542.70
6,000+$ 0.1765$ 1059.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTI
PackagingDSBGA-6
Drain to Source Voltage12V
Output Capacitance(Coss)421pF
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation1.9W
Reverse Transfer Capacitance (Crss@Vds)294pF
RDS(on)15.5mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)1.37nF
Gate Charge(Qg)11.2nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This 8.8 mΩ, 12V N-channel device is designed to deliver the lowest on-resistance and gate charge in an ultra-thin 1.5 mm x 1 mm small outline package with excellent thermal dissipation characteristics.

Features

AI Translation
  • Ultra-low on-resistance
  • Low Qg and Qgd
  • 1mm x 1.5mm compact package
  • Low profile (height: 0.62 mm)
  • Lead-free, RoHS compliant
  • Halogen-free

Applications

AI Translation
  • Battery management
  • Load switch
  • Battery protection