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TI CSD23285F5 product image
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TI CSD23285F5RoHS

Manufacturer
TI
MPN
CSD23285F5
LCSC Part #
C2872328
Packaging
PicoStar-3
Customer #
Key Attributes
MOSFET N-CH 12V 5.4A PicoStar-3
Datasheetpdf iconTI CSD23285F5
In-Stock: 190
190 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3001$ 1.50
50+$ 0.2405$ 12.03
150+$ 0.2114$ 31.71
500+$ 0.1855$ 92.75
3,000+$ 0.1783$ 534.90
6,000+$ 0.174$ 1044.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTI
PackagingPicoStar-3
Configuration-
Drain to Source Voltage12V
Output Capacitance(Coss)397pF
Current - Continuous Drain(Id)5.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))950mV
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)48pF
RDS(on)130mΩ@1.5V
Number1 P-Channel
Input Capacitance(Ciss)628pF
Gate Charge(Qg)4.2nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This 29 mΩ, -12V N-channel FemtoFET MOSFET technology is designed and optimized to minimize space occupied in many handheld and mobile applications. This technology enables significant package size reduction while replacing standard small-signal MOSFETs.

Features

AI Translation
  • Low on-resistance
  • Low Qg and Qgd
  • Ultra-compact size
    • 1.53 mm × 0.77 mm
    • 0.50 mm pad pitch
  • Thin package
    • 0.36 mm thickness
  • Integrated ESD protection diode
    • Rated >4 kV Human Body Model (HBM)
    • Rated >2 kV Charged Device Model (CDM)
  • Lead-free and halogen-free
  • RoHS compliant

Applications

AI Translation
  • Optimized for industrial load switch applications
  • Optimized for general-purpose switching applications