TI CSD17552Q5A
| Manufacturer | |
| MPN | CSD17552Q5A |
| LCSC Part # | C2872188 |
| Packaging | VSONP-8(5x6) |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 60A VSONP-8(5x6) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | VSONP-8(5x6) | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 500pF | |
| Current - Continuous Drain(Id) | 60A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF | |
| RDS(on) | 5.1mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.05nF | |
| Gate Charge(Qg) | 9nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NexFET™ power MOSFETs are designed to significantly reduce power losses in power conversion applications.
Features
AI Translation
- Ultra-low gate charge (Qg) and gate-drain charge (Qgd)
- Low thermal resistance
- Avalanche rated
- Lead-free terminal plating
- RoHS compliant
- Halogen-free
- Small outline no-lead (SON) 5mm × 6mm plastic package
Applications
AI Translation
- Point-of-load synchronous buck conversion in networking, telecom, and computing systems
- Optimized for controlling FET applications
In-Stock: 39
39 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6571 | $ 0.66 |
| 10+ | $ 0.6429 | $ 6.43 |
| 30+ | $ 0.6334 | $ 19.00 |
| 100+ | $ 0.6239 | $ 62.39 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | VSONP-8(5x6) | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 500pF | |
| Current - Continuous Drain(Id) | 60A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF | |
| RDS(on) | 5.1mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.05nF | |
| Gate Charge(Qg) | 9nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NexFET™ power MOSFETs are designed to significantly reduce power losses in power conversion applications.
Features
AI Translation
- Ultra-low gate charge (Qg) and gate-drain charge (Qgd)
- Low thermal resistance
- Avalanche rated
- Lead-free terminal plating
- RoHS compliant
- Halogen-free
- Small outline no-lead (SON) 5mm × 6mm plastic package
Applications
AI Translation
- Point-of-load synchronous buck conversion in networking, telecom, and computing systems
- Optimized for controlling FET applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



